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Schottky Barrier Diodes (SBD)
MA3U760
Silicon epitaxial planar type (cathode common)
Unit : mm
For switching power supply
1.8 0.1
6.5 0.1 5.3 0.1 4.35 0.1
2.3 0.1 0.5 0.1
0.8 max.
* Small U-type package and surface mounting * High breakdown voltage VR * Low forward rise voltage VF * Cathode common dual type
7.3 0.1
I Features
2.5 0.1
0.93 0.1
1.0 0.1 0.1 0.05 0.5 0.1
0.75 0.1 2.3 0.1 4.6 0.1
I Absolute Maximum Ratings Ta = 25C
Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 90 5 40 -40 to +125 -40 to +125 Unit V
1
2
3
A A C C
1 : Anode 2 : Cathode (Common) 3 : Anode U-Type Package
Note) * : Half sine-wave: 10 ms/cycle
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance* Symbol IR VF Rth(j-c) Conditions VR = 90 V, TC = 25C IF = 2.5 A, TC = 25C Between junction and case Min Typ Max 1.0 0.85 12.5 Unit mA V C/W
Note) 1. Rated input/output frequency: 1 000 MHz 2. * : TC = 25C
1.0 0.2
1
MA3U760
IF V F
104 75C 25C Ta = 125C - 20C 1.6 1.4
Schottky Barrier Diodes (SBD)
VF Ta
104
IR VR
Ta = 125C
103
103
Forward current IF (mA)
Forward voltage VF (V)
1.2 1.0 0.8 0.6 0.4 0.2 IF = 5 A 2.5 A 1A
Reverse current IR (A)
75C 102 25C
102
10
10
1
1
10-1
0
0.2
0.4
0.6
0.8
1.0
1.2
0 -40
10-1 0 40 80 120 160 200
0
20
40
60
80
100
120
Forward voltage VF (V)
Ambient temperature Ta (C)
Reverse voltage VR (V)
IR T a
104 VR = 90 V 30 V 10 V
400
Ct VR
f = 1 MHz Ta = 25C
Terminal capacitance Ct (pF)
103
Reverse current IR (A)
300
102
200
10
100
1
10-1 -40
0
0
40
80
120
160
200
0
20
40
60
80
100
120
Ambient temperature Ta
(C)
Reverse voltage VR (V)
2

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